Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in Mn3Mn1-xPdxN thin films
论文编号:
第一作者:
Xu, T.
刊物名称:
JOURNAL OF PHYSICS D-APPLIED PHYSICS
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论文题目:
Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in Mn3Mn1-xPdxN thin films
发表年度:
2018
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